发明名称 Semiconductor device having sensor circuit having amplifier circuit
摘要 In a display portion of a liquid crystal display device, the dead space corresponding to a unit pixel is reduced while the aperture ratio of the unit pixel is increased. One amplifier circuit portion is shared by a plurality of unit pixels, so that the area of the amplifier circuit portion corresponding to the unit pixel is reduced and the aperture ratio of the unit pixel is increased. In addition, when the amplifier circuit portion is shared by a larger number of unit pixels, a photosensor circuit corresponding to the unit pixel can be prevented from increasing in area even with an increase in photosensitivity. Furthermore, an increase in the aperture ratio of the unit pixel results in a reduction in the power consumption of a backlight in a liquid crystal display device.
申请公布号 US9147706(B2) 申请公布日期 2015.09.29
申请号 US201313898716 申请日期 2013.05.21
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Koyama Jun;Yamazaki Shunpei
分类号 H01L27/146 主分类号 H01L27/146
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A semiconductor device comprising: a plurality of pixels; and a plurality of sensor circuits, wherein each of the plurality of sensor circuits comprises an amplifier circuit and a plurality of light-receiving elements, wherein the amplifier circuit comprises a first transistor, a second transistor and a third transistor, wherein a fourth transistor is provided for each of the plurality of the light-receiving elements, wherein a gate of the first transistor is electrically connected to a first line, one of a source and drain of the first transistor is electrically connected to a second line, wherein one of a source and drain of the second transistor is electrically connected to the second line and a gate of the second transistor is electrically connected to the other of the source and the drain of the first transistor, wherein one of a source and drain of the third transistor is electrically connected to the other of the source and drain of the second transistor and the other of the source and drain of the third transistor is electrically connected to a third line, wherein each of the light-receiving elements are electrically connected to a node at which the other of the source and the drain of the first transistor and the gate of the second transistor are electrically connected via the fourth transistor, and wherein a number of the sensor circuits is less than a number of the pixels.
地址 Atsugi-shi, Kanagawa-ken JP