| 发明名称 | Double-side process silicon MOS and passive devices for RF front-end modules | ||
| 摘要 | A method for forming integrated circuit includes providing a first semiconductor substrate having a front surface and a back surface that is opposite to the front surface. One or more first trenches are in the first semiconductor substrate from the front surface side, the first trenches being characterized by a first depth. One or more second trenches are formed in the first semiconductor substrate from the front surface side, the second trenches being characterized by a second depth which greater than the first depth. A horizontal isolation layer is formed parallel to the front surface and at a third depth from the front surface. The method also includes forming a first recessed region extending in the first semiconductor substrate from the back surface side to the horizontal isolation layer that results in a thinned semiconductor region having a thickness substantially equal to the third depth. The method further includes forming a bulk dielectric layer covering the back surface side of the first semiconductor substrate. | ||
| 申请公布号 | US9147598(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201314084597 | 申请日期 | 2013.11.19 |
| 申请人 | Semiconductor Manufacturing International (Shanghai) Corporation | 发明人 | Huang Herb He;Drowley Cliff |
| 分类号 | H01L27/06;H01L29/78;H01L21/762 | 主分类号 | H01L27/06 |
| 代理机构 | Kilpatrick Townsend and Stockton LLP | 代理人 | Kilpatrick Townsend and Stockton LLP |
| 主权项 | 1. A method for forming integrated circuit, comprising: providing a first semiconductor substrate having a front surface and a back surface that is opposite to the front surface; forming one or more first trenches in the first semiconductor substrate from the front surface side, the first trenches being characterized by a first depth; forming one or more second trenches in the first semiconductor substrate from the front surface side, the second trenches being characterized by a second depth which greater than the first depth; forming a horizontal isolation layer parallel to the front surface and at a third depth from the front surface; forming a first recessed region extending in the first semiconductor substrate from the back surface side to the horizontal isolation layer that results in a thinned semiconductor region having a thickness substantially equal to the third depth; and forming a bulk dielectric layer covering the back surface side of the first semiconductor substrate. | ||
| 地址 | Shanghai CN | ||