| 发明名称 | Semiconductor memory apparatus | ||
| 摘要 | A semiconductor memory apparatus includes a first data storage region configured to be supplied with a driving voltage via a first voltage line, a second data storage region configured to be supplied with a driving voltage via a second voltage line and a switch configured to one of electrically couple the first voltage line with the second voltage line and decouple the first voltage line from the second voltage line in response to a switching control signal. | ||
| 申请公布号 | US9147450(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201414208633 | 申请日期 | 2014.03.13 |
| 申请人 | SK Hynix Inc. | 发明人 | Kang Kyeong Pil |
| 分类号 | G11C5/14;G11C7/12 | 主分类号 | G11C5/14 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor memory apparatus comprising: a first data storage region configured to be supplied with a driving voltage via a first voltage line; a second data storage region configured to be supplied with a driving voltage via a second voltage line; a switch configured to one of electrically couple the first voltage line with the second voltage line and electrically decouple the first voltage line from the second voltage line in response to a switching control signal, and a switching control signal generation block configured to compare a voltage level of the first voltage line with a reference voltage and a voltage level of the second voltage line with the reference voltage and responsively generate the switching control signal. | ||
| 地址 | Gyeonggi-do KR | ||