Semiconductor structure and manufacturing method thereof

摘要

A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

主权项

1. A method of manufacturing a semiconductor structure, comprising:
providing a substrate; forming a silicide region on the substrate; disposing a first dielectric on the substrate; forming a metal gate structure on the substrate; disposing a second dielectric over the metal gate structure and the substrate; performing a first etch in the second dielectric thereby forming a first opening to expose a top surface of a metallic material in the metal gate structure; performing a second etch in the first dielectric thereby forming a second opening to expose the silicide region of the substrate; and performing a wet etch in the first opening to remove a portion of the metallic material from the top surface thereby forming a lateral recess under the second dielectric.