发明名称 Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
摘要 A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.
申请公布号 US9146540(B2) 申请公布日期 2015.09.29
申请号 US201213570363 申请日期 2012.08.09
申请人 Honeywell International Inc. 发明人 Youngner Daniel W.;Ridley Jeff A.;Lu Son T.
分类号 H01L31/02;G04F5/14 主分类号 H01L31/02
代理机构 Fogg & Powers LLC 代理人 Fogg & Powers LLC
主权项 1. A method for enhancing gas pressure uniformity during anodic bonding, the method comprising: providing a first wafer comprising a plurality of vapor cell dies each with at least one chamber; increasing a temperature of the first wafer at a first rate during anodic bonding of the first wafer to a second wafer; and increasing a gas pressure between the first and second wafers at a second rate while the temperature is increasing.
地址 Morristown NJ US