发明名称 Material having a multilayer architecture and intended for being contacted with liquid silicon
摘要 The present invention relates to novel materials intended for being contacted with liquid silicon and having a multilayer architecture, the intermediate layer of which is formed by a silicon carbide matrix containing at least one carbon nodule. The invention also relates to the method for preparing said materials.
申请公布号 US9145339(B2) 申请公布日期 2015.09.29
申请号 US200913062472 申请日期 2009.09.03
申请人 Commissariat a l'Energie Atomique et Energies Alternatives;Center National de la Recherche Scientifique 发明人 Garandet Jean-Paul;Camel Denis;Drevet Béatrice;Eustathopoulos Nicolas;Israel Rana
分类号 B32B3/26;C04B35/573;C04B35/80;C04B41/00;C04B41/50;C04B41/87;C30B11/00;C30B29/06;C30B35/00 主分类号 B32B3/26
代理机构 Scully, Scott, Murphy & Presser 代理人 Scully, Scott, Murphy & Presser
主权项 1. A material part, possessing a multilayer architecture formed of at least: one support layer based on carbon that possesses an open volume porosity varying from 25% to 40% and consists of graphite grains having a micrometric size of 1 to 10 μm, a surface layer made of silicon carbide, an intermediate layer inserted between said support and surface layers, wherein said intermediate layer is formed of a matrix of silicon carbide containing at least 30% by volume of a carbon nodule or nodules, with the volume fraction of silicon carbide forming said intermediate layer being equal to the volume fraction of the initial porosity of the graphite forming the support layer based on carbon, multiplied by at least 1.2, the volume fraction of silicon carbide forming the intermediate layer varying from 45% to 70%, and the surface and intermediate layers possessing less than 5% by volume of solid silicon.
地址 Paris FR