发明名称 Light emitting diode and method for manufacturing the same
摘要 A light emitting diode (LED) includes a base, an LED die grown on the base, a transparent electrically conductive layer formed on a side of the LED die, a protecting layer covering the transparent electrically conductive layer, and a phosphor layer formed on the protecting layer. Through holes extend through the phosphor layer and the protecting layer to make part of light emitted from the LED die directly traveling out from the through holes to illuminate. A method for manufacturing the LED is also provided.
申请公布号 US9147810(B2) 申请公布日期 2015.09.29
申请号 US201313956308 申请日期 2013.07.31
申请人 ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. 发明人 Peng Chien-Chung;Hung Tzu-Chien;Shen Chia-Hui
分类号 H01L33/00;H01L33/42;H01L33/44;H01L33/50 主分类号 H01L33/00
代理机构 Novak Druce Connolly Bove + Quigg LLP 代理人 Novak Druce Connolly Bove + Quigg LLP
主权项 1. A light emitting diode (LED) comprising: a base; an LED die grown on the base, an N-type electrode and a P-type electrode formed on right and left ends of the LED die, respectively; a transparent electrically conductive layer only formed on a left end of a top surface of the LED die, the P-type electrode directly formed on the transparent electrically conductively layer; a protecting layer covering the transparent electrically conductive layer and lateral edges of the N-type electrode and the P-type electrode, and the protecting layer being continuous; and a phosphor layer formed on the protecting layer, only covering a part of the protecting layer located on the transparent electrically conductive layer and located between and spaced from inner sides of the N-type electrode and the P-type electrode which face to each other; wherein a plurality of through holes extends through the phosphor layer and the protecting layer to make part of light emitted from the LED die directly traveling out from the through holes to illuminate, and the N-type electrode and the P-type electrode are only covered by the protecting layer.
地址 Hsinchu Hsien TW