Semiconductor light emitting device and fabrication method thereof

摘要

A semiconductor light emitting device according to an embodiment includes a top layer having a top surface and a bottom surface, the top layer being an n electrode; an uneven pattern formed in the bottom surface of the n electrode; an n-type semiconductor layer formed under the n electrode, the n-type semiconductor layer having a top surface and a bottom surface; an uneven pattern formed in the top surface of the n-type semiconductor layer, the uneven pattern of the n-type semiconductor layer corresponding to the uneven pattern of the n electrode; an active layer formed under the n-type semiconductor layer; a p-type semiconductor layer formed under the active layer; and a p electrode formed under the p-type semiconductor layer.

主权项

1. A semiconductor light emitting device, comprising:
a top layer having a top surface and a bottom surface, the top layer being an n electrode; an uneven pattern formed in the bottom surface of the n electrode; a GaN based n-type semiconductor layer formed under the n electrode, the GaN based n-type semiconductor layer having a top surface and a bottom surface; an uneven pattern formed in the top surface of the GaN based n-type semiconductor layer, the uneven pattern of the GaN based n-type semiconductor layer directly physically contacting the uneven pattern of the n electrode; an active layer formed under the GaN based n-type semiconductor layer; a GaN based p-type semiconductor layer formed under the active layer; and a p electrode formed under the GaN based p-type semiconductor layer, wherein a light emitting structure including the GaN based n-type semiconductor layer, the active layer, and the GaN based p-type semiconductor layer generates light, wherein a top surface of the light emitting structure directly contacts the n electrode, wherein the GaN based n-type semiconductor layer only includes GaN based semiconductor materials, wherein the uneven pattern formed in the top surface of the GaN based n-type semiconductor layer is directly formed in the GaN based n-type semiconductor layer, wherein the uneven pattern formed in the top surface of the GaN based n-type semiconductor layer is formed at different intervals, wherein at least the n electrode is formed over the entire top surface of the GaN based n-type semiconductor layer, or at least the p electrode is formed over the entire surface of the GaN based p-type semiconductor layer, wherein an entire surface of the n electrode contacts the GaN based n-type semiconductor layer,wherein a width of the top surface of the top layer and a width of the bottom surface of the top layer are the same, and wherein a growing substrate is not disposed between the n electrode and the p electrode.