发明名称 Hybrid bipolar junction transistor
摘要 Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.
申请公布号 US9147715(B2) 申请公布日期 2015.09.29
申请号 US201414184384 申请日期 2014.02.19
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Afzali-Ardakani Ali;Hekmatshoartabari Bahman;Ning Tak H.;Shahrjerdi Davood
分类号 H01L35/24;H01L27/32;H01L29/73 主分类号 H01L35/24
代理机构 Otterstedt, Ellenbogen & Kammer, LLP 代理人 Percello Louis J.;Otterstedt, Ellenbogen & Kammer, LLP
主权项 1. A bipolar junction transistor comprising: a doped inorganic semiconductor layer; an emitter electrode; a base electrode; a collector electrode; a first structure operatively associated with the emitter electrode for transporting charge carriers having a first charge type into the inorganic semiconductor layer and suppressing diffusion of charge carriers having a second charge type opposite from the first charge type from the inorganic semiconductor layer, the first structure being positioned between the emitter electrode and the inorganic semiconductor layer and including a first organic semiconductor carrier transport layer for transporting the charge carriers having the first type; a second structure operatively associated with the base electrode for transporting charge carriers having the second charge type into the inorganic semiconductor layer and suppressing diffusion of charge carriers having the first charge type from the inorganic semiconductor layer, the second structure being positioned between the base electrode and the inorganic semiconductor layer, and a third structure operatively associated with the collector electrode for transporting charge carriers having the first charge type into the inorganic semiconductor layer and suppressing diffusion of charge carriers having the second charge type from the inorganic semiconductor layer, the third structure being positioned between the collector electrode and the inorganic semiconductor layer.
地址 Armonk NY US