Method for forming separate narrow lines, method for fabricating memory structure, and product thereof

摘要

A method for forming separate narrow lines is described. A target layer is formed over a substrate. Base patterns are formed over the target layer. Target line patterns and connection patterns between the ends of the target line patterns are formed as spacers on the sidewalls of the base patterns. The base patterns are removed. The target line patterns and the connection patterns are transferred to the target layer to form target lines and connection segments between the ends of the target lines. At least a portion of each connection segment is removed to disconnect the target lines while other area of the substrate is subjected to a patterned removal treatment.

主权项

1. A method for forming separate narrow lines, comprising:
forming a target layer over a substrate; forming a plurality of base patterns over the target layer; forming, as spacers on sidewalls of the base patterns, a plurality of target line patterns and a plurality of connection patterns between ends of the target line patterns; removing the base patterns; transferring the target line patterns and the connection patterns to the target layer to form a plurality of target lines, and a plurality of connection segments between ends of the target lines; and removing at least a portion of each connection segment to disconnect the target lines while other area of the substrate is subjected to a patterned removal treatment.