| 发明名称 | Chip comprising a backside metal stack | ||
| 摘要 | A method for manufacturing a plurality of chips comprises the step of providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface, the step of providing a laser absorption layer on a second main surface opposite to the first main surface and the step of providing a backside metal stack on the laser absorption layer. After that a laser light is applied to the laser absorption layer along the dicing lines before the chips are singulated along the dicing lines by using stealth dicing. | ||
| 申请公布号 | US9147624(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201414296006 | 申请日期 | 2014.06.04 |
| 申请人 | Infineon Technologies AG | 发明人 | Mackh Gunther;Koller Adolf |
| 分类号 | H01L29/06;H01L23/29;H01L21/78;H01L23/00 | 主分类号 | H01L29/06 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A chip comprising: a substrate; a backside metal stack; a laser absorption layer between the substrate and the backside metal stack; and an area comprising a laser illumination reaction product of a material of the substrate and of a material of the laser absorption layer disposed between the substrate and laser absorption layer, wherein the laser illuminating reaction product is arranged at least along dicing edges of the chip. | ||
| 地址 | Neubiberg DE | ||