Plasma etching method and plasma processing apparatus

摘要

A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.

主权项

1. A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method comprising:
depositing a Si-containing compound on the etching mask made of the resist film by using plasma of a Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask, wherein the Si-containing gas is a gaseous mixture of SiCl4 gas and O2 gas, and wherein a flow rate ration of the SiCl4 gas to the O2 gas is controlled to be in a range from 1:4 to 1:10 such that the Si-containing compound deposited on an upper surface of the etching mask is thicker than Si-containing compound deposited on a side surface of the etching mask.