FinFET semiconductor devices with improved source/drain resistance and methods of making same

摘要

Disclosed herein are various FinFET semiconductor devices with improved source/drain resistance and various methods of making such devices. One illustrative device disclosed herein includes a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches at least partially define a fin for the device, an etch stop layer positioned above a bottom surface of each of the trenches, and a metal silicide region formed on all exposed surfaces of the fin that are positioned above an upper surface of the etch stop layer.

主权项

1. A method of forming a FinFET device, comprising:
forming a plurality of trenches in a semiconducting substrate that at least partially define a fin for said FinFET device; forming an etch stop layer above a bottom surface of each of said trenches; forming a sacrificial layer above said etch stop layer; after forming said sacrificial layer, forming a gate structure for said FinFET device,
wherein forming said gate structure comprises forming a layer of gate insulation material over said fin and above said sacrificial layer and forming a layer of gate electrode material above said layer of gate insulation material; after forming said gate structure, removing at least a portion of said sacrificial layer to expose at least a portion of said fin; forming a semiconductor material on at least some of said exposed portion of said fin; and forming a metal silicide region on at least some of said exposed surfaces of said fin and said semiconductor material that are positioned above an upper surface of said etch stop layer.