Charge-compensation semiconductor device

摘要

An active area of a semiconductor body includes a first charge-compensation structure having spaced apart n-type pillar regions, and an n-type first field-stop region of a semiconductor material in Ohmic contact with a drain metallization and the n-type pillar regions and having a doping charge per area higher than a breakdown charge per area of the semiconductor material. A punch-through area of the semiconductor body includes a p-type semiconductor region in Ohmic contact with a source metallization, a floating p-type body region and an n-type second field-stop region. The floating p-type body region extends into the active area. The second field-stop region is in Ohmic contact with the first field-stop region, forms a pn-junction with the floating p-type body region, is arranged between the p-type semiconductor region and floating p-type body region, and has a doping charge per area lower than the breakdown charge per area of the semiconductor material.

主权项

1. A semiconductor device, comprising a semiconductor body comprising a main horizontal surface, an active area, a punch through area, a source metallization arranged on the main horizontal surface and a drain metallization, in the active area the semiconductor body further comprising in a vertical cross-section substantially orthogonal to the main horizontal surface:
a first charge-compensation structure comprising a plurality of spaced apart first n-type pillar regions; and an n-type first field-stop region comprised of a semiconductor material, in Ohmic contact with the drain metallization and the first n-type pillar regions, and having a doping concentration per area higher than a breakdown charge per area of the semiconductor material divided by the elementary charge,in the punch-through area the semiconductor body further comprising:
a p-type semiconductor region in Ohmic contact with the source metallization; a floating p-type body region extending from the punch-through area into the active area; and an n-type second field-stop region in Ohmic contact with the first field-stop region, forming a pn-junction with the floating p-type body region, arranged between the p-type semiconductor region and the floating p-type body region, and having a doping concentration per area lower than the breakdown charge per area of the semiconductor material divided by the elementary charge.