Projection exposure system and projection exposure method,申请号US201313786134-传众专利搜索

发明名称	Projection exposure system and projection exposure method
摘要	A projection exposure system includes an illumination system configured to illuminate a mask with radiation. The projection exposure system also includes a projection objective configured to project an image of a pattern of the mask onto a radiation-sensitive substrate. The projection exposure system further includes an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle-selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function.
申请公布号	US9146475(B2)	申请公布日期	2015.09.29
申请号	US201313786134	申请日期	2013.03.05
申请人	Carl Zeiss SMT GmbH	发明人	Gräupner Paul;Conradi Olaf;Zaczek Christoph;Ulrich Wilhelm;Beierl Helmut;Gruner Toralf;Graeschus Volker
分类号	G03B27/72;G03F7/20	主分类号	G03B27/72
代理机构	Fish & Richardson P.C.	代理人	Fish & Richardson P.C.
主权项	1. A system, comprising: an illumination system configured to illuminate a mask with radiation, the mask having a pattern; a projection objective configured to project an image of the pattern arranged in an object surface of the projection objective onto a radiation-sensitive substrate arranged in an image surface of the projection objective at an image-side numerical aperture (NA); an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface, the angle-selective filter arrangement being effective to filter radiation incident on the filter arrangement according to an angle-selective filter function comprising: a pass band with relatively high transmittance of intensity of incident radiation for angles of incidence smaller than a cut-off angle of incidence (AOICUT); anda stop band with relatively low transmittance of intensity of incident radiation for angles of incidence greater than the cut-off angle of incidence AOICUT, wherein: AOICUT=arcsin(NA*\|β\|);β is a magnification of an image formation between the field surface at or adjacent to the filter plane and the image surface of the projection objective;an integral transmittance of radiation from all angles of incidence in the stop band at AOI>AOICUT is no more than 1% of an integral transmittance of radiation in the pass band at AOI<AOICUT;the mask comprises a first partial pattern and a second partial pattern which are arranged side by side;the first and second partial patterns have different structure;the filter arrangement comprises a first filter area in the optical path downstream of the first partial pattern;the filter arrangement has a second filter area downstream of the second partial pattern area;a first filter coating in the first filter area is configured to provide a first cut-off angle of incidence corresponding to a first image-side numerical aperture; anda second filter coating is configured to provide a second cutoff angle which is greater or smaller than the first cut-off angle.
地址	Oberkochen DE