发明名称 |
PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR |
摘要 |
An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer. |
申请公布号 |
SG11201506465Q(A) |
申请公布日期 |
2015.09.29 |
申请号 |
SG11201506465Q |
申请日期 |
2014.03.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BEASLEY, CARA;HOFMANN, RALF;FOAD, MAJEED A.;MICHAELSON, TIMOTHY |
分类号 |
H01L21/027;H01L21/02 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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