发明名称 Single walled carbon nanotube-based planar photodector
摘要 A single-walled carbon nanotube-based planar photodetector includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other; a plurality of single-walled carbon nanotubes, each of the plurality of single-walled carbon nanotubes contacting the first electrode and the second electrode; and an adsorbent attached to a surface of at least one of the plurality of single-walled carbon nanotubes, wherein the adsorbent is capable of doping the at least one of the plurality of single-walled carbon nanotubes by photo-excitation.
申请公布号 US9147845(B2) 申请公布日期 2015.09.29
申请号 US201313871377 申请日期 2013.04.26
申请人 SAMSUNG ELECTRONICS CO., LTD.;The Board of Trustees of the Leland Stanford Junior University 发明人 Park Young-jun;Park Steve;Bao Zhenan
分类号 H01L51/00;H01L51/52;H01L27/30;B82Y30/00;H01L51/05;H01L51/42 主分类号 H01L51/00
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A single-walled carbon nanotube-based planar photodetector comprising: a substrate; a self assembled monolayer (SAM) on the substrate in a form of a plurality of lines; a first electrode and a second electrode disposed on the substrate and spaced apart from each other; a plurality of single-walled carbon nanotubes, each of the plurality of single-walled carbon nanotubes contacting the first electrode and the second electrode, and the plurality of single-walled carbon nanotubes being aligned to closely contact a surface of the SAM; and an adsorbent attached to a surface of at least one of the plurality of single-walled carbon nanotubes, wherein when irradiated with light, the adsorbent adsorbs either electrons or holes and p-dopes or n-dopes the at least one of the plurality of single-walled carbon nanotubes, and when not irradiated with light, the at least one of the plurality of single-walled carbon nanotubes is not p-doped or n-doped.
地址 Suwon-si KR