| 发明名称 | Method of providing chloride treatment for a photovoltaic device and a chloride treated photovoltaic device | ||
| 摘要 | A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device. | ||
| 申请公布号 | US9147792(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201313897915 | 申请日期 | 2013.05.20 |
| 申请人 | First Solar, Inc. | 发明人 | Christensen Scott;Powell Rick C.;Xiong Gang |
| 分类号 | H01L21/00;H01L31/18;H01L31/0296;H01L31/073 | 主分类号 | H01L21/00 |
| 代理机构 | Dickstein Shapiro LLP | 代理人 | Dickstein Shapiro LLP |
| 主权项 | 1. A method of manufacturing a photovoltaic device, the method comprising: depositing a cadmium telluride layer over a substrate; treating the cadmium telluride layer with a chloride compound comprising chlorine and one or more elements selected from the group consisting of an element from Groups 1-11, zinc, mercury and copernicium, wherein the cadmium telluride layer is treated during at least a portion of cadmium telluride deposition; annealing the cadmium telluride layer; and following cadmium telluride deposition, depositing a semiconductor reflector layer over the cadmium telluride layer. | ||
| 地址 | Perrysburg OH US | ||