| 发明名称 |
Power semiconductor device and method for manufacturing the same |
| 摘要 |
There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer. |
| 申请公布号 |
US9147757(B2) |
申请公布日期 |
2015.09.29 |
| 申请号 |
US201313874038 |
申请日期 |
2013.04.30 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
Um Kee Ju;Seo Dong Soo;Jang Chang Su;Song In Hyuk;Park Jaehoon |
| 分类号 |
H01L29/74;H01L29/739;H01L29/66;H01L29/40;H01L29/06 |
主分类号 |
H01L29/74 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a drift layer of a first conductivity type; a termination layer of a second conductivity type formed on an upper portion of an edge in a length direction of the drift layer; a high concentration channel stop layer of the first conductivity type formed on a side surface of the edge in the length direction of the drift layer; and a channel stop metal layer formed to cover the termination layer and the channel stop layer at the edge of the drift layer. |
| 地址 |
Suwon KR |
