Monolithic integration of field-plate and T-gate devices

摘要

A method of fabricating amplifiers, includes monolithically integrating a field-plate transistor and T-gate transistor on a single wafer. A device includes a monolithically integrated field-plate transistor and T-gate transistor on a single wafer.

主权项

1. A method of monolithically integrating a field-plate transistor and T-gate transistor on a single wafer comprising:
depositing an insulating dielectric layer onto a single wafer comprising a substrate and an epitaxial semiconductor layer; defining field-plate device and T-gate device sacrificial dummy-gate structures into the insulating dielectric layer and epitaxial semiconductor layer; removing the predefined sacrificial dummy-gate structures materials to create patterned features; and metalizing the field-plate device and T-gate device.