发明名称 |
Reactive contacts for 2D layered metal dichalcogenides |
摘要 |
Techniques for forming metal contacts to LMDC-based devices are provided. In one aspect, a method of forming a metal contact to a LMDC semiconductor material includes the steps of: depositing a contact metal onto the LMDC semiconductor material; and annealing the LMDC semiconductor material and the contact metal under conditions sufficient to react the contact metal with the LMDC semiconductor material and thereby form a buffer layer as an interface between the contact metal and the LMDC semiconductor material that compositionally is a transition from the LMDC semiconductor material to the contact metal and connects the LMDC semiconductor material and the contact metal by covalent bonds. The LMDC semiconductor material can be a material having a formula MX2, wherein M is a metal, and X is a chalcogen. A LMDC-based device and techniques for forming the device are also provided. |
申请公布号 |
US9147824(B1) |
申请公布日期 |
2015.09.29 |
申请号 |
US201414272889 |
申请日期 |
2014.05.08 |
申请人 |
International Business Machines Corporation |
发明人 |
Cao Qing;Han Shu-Jen |
分类号 |
H01L21/44;H01L21/06;H01L39/24;H01L29/40;H01L49/02;H01L21/02 |
主分类号 |
H01L21/44 |
代理机构 |
Vazken Alexanian |
代理人 |
Vazken Alexanian ;Chang, LLC Michael J. |
主权项 |
1. A method of forming a metal contact to a two-dimensional layered metal dichalcogenides (LMDC) semiconductor material, the method comprising the steps of:
depositing a contact metal onto the LMDC semiconductor material; and annealing the LMDC semiconductor material and the contact metal under conditions sufficient to react the contact metal with the LMDC semiconductor material and thereby form a buffer layer as an interface between the contact metal and the LMDC semiconductor material that compositionally is a transition from the LMDC semiconductor material to the contact metal and connects the LMDC semiconductor material and the contact metal by covalent bonds. |
地址 |
Armonk NY US |