Nitride semiconductor structure and semiconductor light emitting device including the same,申请号US201313963127-传众专利搜索

发明名称	Nitride semiconductor structure and semiconductor light emitting device including the same
摘要	A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm−3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
申请公布号	US9147800(B2)	申请公布日期	2015.09.29
申请号	US201313963127	申请日期	2013.08.09
申请人	Genesis Photonics Inc.	发明人	Lai Yen-Lin;Wu Jyun-De;Li Yu-Chu
分类号	H01L29/06;H01L33/06;H01L33/14;H01L33/32	主分类号	H01L29/06
代理机构	Jianq Chyun IP Office	代理人	Jianq Chyun IP Office
主权项	1. A nitride semiconductor structure comprising: a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer disposed between the first type doped semiconductor layer and the second type doped semiconductor layer; a hole supply layer disposed between the light emitting layer and the second type doped semiconductor layer, wherein the hole supply layer is made of Alx1Iny1Ga1-x1-y1N (0<x1<1, 0<y1<1, and 0<x1+y1<1); the hole supply layer is doped with a second type dopant at a concentration larger than 1018 cm−3; and a second type carrier blocking layer disposed between the hole supply layer and the second type doped semiconductor layer, wherein the second type carrier blocking layer is made of Alx2Ga1-x2N, wherein 0<x2<1; wherein the second type doped semiconductor layer is doped with the second type dopant at a concentration larger than 5×1019 cm−3 and a thickness of the second type doped semiconductor layer is smaller than 30 nm.
地址	Tainan TW