Nonvolatile semiconductor memory device and method for manufacturing same

摘要

A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked above the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction; a first core insulating unit extending in the first direction, the first semiconductor pillar being disposed between the first core insulating unit and the stacked structural unit, a position of an upper end of the first core insulating unit in the first direction being located between a position of an upper end of the insulating layer in the first direction and a position of an upper end of the selection gate electrode in the first direction; and a first conducting layer provided on the first core insulating unit to contact the first core insulating unit.