发明名称 |
Deposition of N-metal films comprising aluminum alloys |
摘要 |
Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane. |
申请公布号 |
US9145612(B2) |
申请公布日期 |
2015.09.29 |
申请号 |
US201313930194 |
申请日期 |
2013.06.28 |
申请人 |
Applied Materials, Inc. |
发明人 |
Gandikota Srinivas;Lu Xinliang;Chen Shih Chung;Tang Wei;Zhou Jing;Ganguli Seshadri;Thompson David;Anthis Jeffrey W.;Noori Atif;Gungor Faruk;Wu Dien-Yeh;Chang Mei;Fu Xinyu;Lei Yu |
分类号 |
C23C18/00;C23C16/08;C23C16/18;C23C16/455 |
主分类号 |
C23C18/00 |
代理机构 |
Servilla Whitney LLC |
代理人 |
Servilla Whitney LLC |
主权项 |
1. A method of depositing an aluminum alloy film by atomic layer deposition (ALD), the method comprising:
exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the metal halide at the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, or an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, or a compound having formula wherein each R is independently C1-C6, to provide an aluminum alloy film consisting essentially of TiAl, TaAl, or HfAl, and less than 10% carbon. |
地址 |
Santa Clara CA US |