发明名称 |
ION IMPLANTATION COMPOSITIONS, SYSTEMS, AND METHODS |
摘要 |
Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership. |
申请公布号 |
SG11201506605X(A) |
申请公布日期 |
2015.09.29 |
申请号 |
SGX11201506605 |
申请日期 |
2014.03.03 |
申请人 |
ENTEGRIS, INC. |
发明人 |
BYL, OLEG;SWEENEY, JOSEPH, D.;TANG, YING;RAY, RICHARD, S. |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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