Forming modified cell architecture for finFET technology and resulting device

摘要

Methods for accommodating a non-integer multiple of the M2 pitch for the cell height of a semiconductor cell and the resulting devices are disclosed. Embodiments may include forming a cell within an integrated circuit (IC) with a height of a first integer and a remainder times a track pitch of a metal track layer, and forming power rails within the metal track layer at boundaries of the cell accommodating for the remainder.

主权项

1. A method comprising:
forming a cell within an integrated circuit (IC), the cell having a height of a first integer and a remainder times a track pitch of a metal track layer; and forming power rails within the metal track layer at boundaries of the cell accommodating for the remainder, wherein: the track pitch is 64 nanometers (nm), the first integer is eight, and the remainder is a quarter.