发明名称 ECC method for double pattern flash memory
摘要 A method of operating a memory device storing ECCs for corresponding data is provided. The method includes writing an extended ECC during a first program operation, the extended ECC including an ECC and an extended bit derived from the ECC. The method includes overwriting the extended ECC with a pre-determined state during a second program operation to indicate the second program operation. The method includes, setting the ECC to an initial ECC state before the first program operation; during the first program operation, computing the ECC, changing the ECC to the initial ECC state if the computed ECC equals the pre-determined state; and changing the extended bit to an initial value if the ECC equals the initial ECC state. The method includes reading an extended ECC including an extended bit and an ECC for corresponding data, and determining whether to enable ECC logic using the extended ECC.
申请公布号 US9146809(B2) 申请公布日期 2015.09.29
申请号 US201314047418 申请日期 2013.10.07
申请人 Macronix International Co., Ltd. 发明人 Huang Shih-Chang;Chen Ken-Hui;Hung Chun-Hsiung
分类号 G06F11/10;G11C29/52 主分类号 G06F11/10
代理机构 Haynes Beffel & Wolfeld LLP 代理人 Wu Yiding;Haynes Beffel & Wolfeld LLP
主权项 1. A method of operating a memory device storing error correcting codes ECCs for corresponding data, comprising: writing an extended ECC for corresponding data during a first program operation, the extended ECC including an ECC and an extended bit derived from the ECC; and overwriting the extended ECC including the extended bit and the ECC for the corresponding data with a pre-determined state during a second program operation after the first program operation to indicate that the corresponding data is written with the second program operation.
地址 Hsinchu TW