| 发明名称 |
Resistive memory cell and method for forming a resistive memory cell |
| 摘要 |
A resistive element of a resistive memory cell. The resistive element includes a contact in communication with a substrate. A bottom electrode is formed on the contact. A transitional metal oxide layer is formed on the bottom electrode. The transitional metal oxide layer includes oxygen vacancies configured to receive donor oxygen atoms. A transition layer formed on the transitional metal oxide layer includes donor oxygen atoms. A reactive metal layer is formed on the transition layer. A top electrode is formed on the transitional metal oxide layer. The transition layer is configured to provide the donor oxygen atoms to the transitional metal oxide layer in response to a voltage being applied to the top electrode. |
| 申请公布号 |
US9147837(B1) |
申请公布日期 |
2015.09.29 |
| 申请号 |
US201514609853 |
申请日期 |
2015.01.30 |
| 申请人 |
Marvell International Ltd. |
发明人 |
Sutardja Pantas;Wu Albert;Lee Winston;Lee Peter;Chang Runzi |
| 分类号 |
G11C11/00;H01L45/00;G11C13/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive element of a resistive memory cell, the resistive element comprising:
a contact in communication with a substrate; a bottom electrode formed on the contact; a transitional metal oxide layer formed on the bottom electrode, wherein the transitional metal oxide layer includes oxygen vacancies configured to receive donor oxygen atoms; a transition layer formed on the transitional metal oxide layer, wherein the transition layer includes donor oxygen atoms; a reactive metal layer formed on the transition layer; and a top electrode formed on the transitional metal oxide layer, wherein the transition layer is configured to provide the donor oxygen atoms to the transitional metal oxide layer in response to a voltage being applied to the top electrode. |
| 地址 |
Hamilton BM |
