发明名称 Cavity structures for MEMS devices
摘要 Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.
申请公布号 US9145292(B2) 申请公布日期 2015.09.29
申请号 US201414281251 申请日期 2014.05.19
申请人 Infineon Technologies AG 发明人 Winkler Bernhard;Zankl Andreas;Pruegl Klemens;Kolb Stefan
分类号 H01L21/71;H01L21/205;H01L27/04;H01L27/20;B81B7/02;B81B7/00;B81C1/00;H01L27/06 主分类号 H01L21/71
代理机构 Schiff Hardin LLP 代理人 Schiff Hardin LLP
主权项 1. A method of forming a monolithic integrated sensor device comprising: forming a microelectromechanical system (MEMS) device on a non-silicon-on-insulator (non-SOI) substrate by: forming a monocrystalline sacrificial layer on only a first portion of the non-SOI substrate,depositing a first silicon layer on the monocrystalline sacrificial layer and on a second portion of the non-SOI substrate different from the first portion,forming a cavity in the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer, andsealing the cavity by depositing a second silicon layer; and forming a transistor on the second portion of the non-SOI substrate, the transistor comprising at least a portion of the second silicon layer.
地址 Neubiberg DE