发明名称 |
Cavity structures for MEMS devices |
摘要 |
Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective. |
申请公布号 |
US9145292(B2) |
申请公布日期 |
2015.09.29 |
申请号 |
US201414281251 |
申请日期 |
2014.05.19 |
申请人 |
Infineon Technologies AG |
发明人 |
Winkler Bernhard;Zankl Andreas;Pruegl Klemens;Kolb Stefan |
分类号 |
H01L21/71;H01L21/205;H01L27/04;H01L27/20;B81B7/02;B81B7/00;B81C1/00;H01L27/06 |
主分类号 |
H01L21/71 |
代理机构 |
Schiff Hardin LLP |
代理人 |
Schiff Hardin LLP |
主权项 |
1. A method of forming a monolithic integrated sensor device comprising:
forming a microelectromechanical system (MEMS) device on a non-silicon-on-insulator (non-SOI) substrate by:
forming a monocrystalline sacrificial layer on only a first portion of the non-SOI substrate,depositing a first silicon layer on the monocrystalline sacrificial layer and on a second portion of the non-SOI substrate different from the first portion,forming a cavity in the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer, andsealing the cavity by depositing a second silicon layer; and forming a transistor on the second portion of the non-SOI substrate, the transistor comprising at least a portion of the second silicon layer. |
地址 |
Neubiberg DE |