| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum well type infrared detection element capable of obtaining excellent sensitivity even when the element is downsized and made to be high definition and a manufacturing method of the same.SOLUTION: A quantum well type infrared detection element 40 includes: an active layer 23 formed by laminating a plurality of semiconductor layers whose bandgaps are mutually different; a first contact layer 22, disposed on an infrared light incident surface side, whose infrared light incident surface side and opposite side surface are in contact with one surface of the active layer 23; a second contact layer 24 being in contact with the other surface of the active layer 23; and an isolation groove 44 for dividing the first contact layer 22 and the active layer 23 for each pixel 41a. The isolation groove 44 has a trapezoidal cross section whose infrared light incident surface side is wide and opposite side is narrow. |
