SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method including a laser annealing process capable of inhibiting the occurrence of surface roughness and activating dopant in a deep region.SOLUTION: A semiconductor device manufacturing method comprises the steps of: injecting a first dopant into a surface layer of an IGBT zone of a semiconductor substrate to form a first injection region; injecting a second dopant into a region shallower than the first injection region to form a second injection region; injecting a third dopant into a surface layer of a diode zone at a concentration higher than that of the second dopant to form an amorphous third injection region; subsequently performing laser annealing on the IGBT zone and the diode zone under a condition of partially melting the third injection region and activating the first dopant; and subsequently annealing the IGBT zone and the diode zone by pulse laser beams with a short pulse width to melt and crystallize a surface layer shallower than the second injection region over a whole area of the IGBT zone and the diode zone.