发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR EPITAXIAL WAFER AND SEMICONDUCTOR EPITAXIAL WAFER
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor epitaxial wafer capable of obtaining a complete crack-free semiconductor epitaxial wafer.SOLUTION: The manufacturing method of a semiconductor epitaxial wafer includes steps of: preparing an epitaxial wafer by epitaxially growing a semiconductor layer on a silicon-based substrate; observing the outer periphery of the prepared epitaxial wafer; and removing cracks, epitaxial layer peeling, and a reaction impression part observed in the observation step.
申请公布号 JP2015170648(A) 申请公布日期 2015.09.28
申请号 JP20140042815 申请日期 2014.03.05
申请人 SHIN ETSU HANDOTAI CO LTD;SANKEN ELECTRIC CO LTD;NAOETSU ELECTRONICS CO LTD 发明人 HAGIMOTO KAZUNORI;SHINOMIYA MASARU;TSUCHIYA KEITARO;GOTO HIROICHI;SATO KEN;SHIKAUCHI HIROSHI;KOBAYASHI SHOICHI;KURIMOTO HIROTAKA
分类号 H01L21/205;C23C16/34;C23C16/56;H01L21/20 主分类号 H01L21/205
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