发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR EPITAXIAL WAFER AND SEMICONDUCTOR EPITAXIAL WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor epitaxial wafer capable of obtaining a complete crack-free semiconductor epitaxial wafer.SOLUTION: The manufacturing method of a semiconductor epitaxial wafer includes steps of: preparing an epitaxial wafer by epitaxially growing a semiconductor layer on a silicon-based substrate; observing the outer periphery of the prepared epitaxial wafer; and removing cracks, epitaxial layer peeling, and a reaction impression part observed in the observation step. |
申请公布号 |
JP2015170648(A) |
申请公布日期 |
2015.09.28 |
申请号 |
JP20140042815 |
申请日期 |
2014.03.05 |
申请人 |
SHIN ETSU HANDOTAI CO LTD;SANKEN ELECTRIC CO LTD;NAOETSU ELECTRONICS CO LTD |
发明人 |
HAGIMOTO KAZUNORI;SHINOMIYA MASARU;TSUCHIYA KEITARO;GOTO HIROICHI;SATO KEN;SHIKAUCHI HIROSHI;KOBAYASHI SHOICHI;KURIMOTO HIROTAKA |
分类号 |
H01L21/205;C23C16/34;C23C16/56;H01L21/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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