发明名称 UNDERFILL MATERIAL, LAMINATE SHEET, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide: an underfill material which has an adequate hardening reactivity, is small in change in viscosity even when the load of a heat hysteresis is put thereon, and enables the achievement of good electrical connection; a laminate sheet including such an underfill material; and a method for manufacturing a semiconductor device.SOLUTION: An underfill material has a melt viscosity of 50-3000 Pa s at 150°C before heat treatment, the melt viscosity having the rate of viscosity change represented by (&eegr;2/&eegr;1)×100 being 500% or less, where &eegr;1 represents the melt viscosity at 150°C before heat treatment, and &eegr;2 represents a melt viscosity at 150°C after heat treatment at 130°C for one hour. In the underfill material, a reaction rate expressed by {(Qt-Qh)/Qt}×100 is 90% or more, where Qt represents a total quantity of heat generation in the step of raising the temperature from -50 to 300°C in DSC measurement, and Qh represents a total quantity of heat generation in the step for raising the temperature from -50 to 300°C after heating at 175°C for two hours.
申请公布号 JP2015170754(A) 申请公布日期 2015.09.28
申请号 JP20140045119 申请日期 2014.03.07
申请人 NITTO DENKO CORP 发明人 TAKAMOTO HISAHIDE;HANAZONO HIROYUKI;FUKUI AKIHIRO
分类号 H01L23/29;H01L21/60;H01L23/31 主分类号 H01L23/29
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