GROWTH METHOD OF NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a growth method of a nitride semiconductor having low crystal defect density by an MBE method.SOLUTION: A growth method of a nitride semiconductor by a molecular beam epitaxy (MBE) method includes steps for: forming a buffer layer 2 on a substrate 1; forming an AIN layer 3 at low temperature on the buffer layer 2; and forming an AIN layer 4 at high temperature on the AIN layer 3.