发明名称 ULTRA-THIN EMBEDDED SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a package structure that includes a first dielectric layer, a semiconductor device attached to the first dielectric layer, and an embedding material applied to the first dielectric layer so as to embed the semiconductor device therein.SOLUTION: Vias are formed through the first dielectric layer to the semiconductor device, with metal interconnects formed in the vias to form electrical interconnections to the semiconductor device. Input/output (I/O) connections are located on one end of the package structure on outward facing surfaces of the package structure to enable a second level connection to an external circuit. The package structure interfits with a connector on the external circuit to mount the package perpendicularly to the external circuit, with the I/O connections being electrically connected to the connector to form the second level connection to the external circuit.
申请公布号 JP2015170855(A) 申请公布日期 2015.09.28
申请号 JP20150036002 申请日期 2015.02.26
申请人 GENERAL ELECTRIC CO <GE> 发明人 ARUN VIRUPAKSHA GOWDA;MCCONNELEE PAUL ALAN;SHAKTI SINGH CHAUHAN
分类号 H01L25/07;H01L23/12;H01L23/32;H01L23/40;H01L25/18 主分类号 H01L25/07
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