| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of improving light-receiving sensitivity.SOLUTION: The solid-state imaging device according to an embodiment includes a semiconductor layer, an organic photoelectric conversion layer, and microlenses. A plurality of photoelectric conversion elements for photoelectrically converting incident light are provided in the semiconductor layer. The organic photoelectric conversion layer is provided on the light-receiving surface side of the semiconductor layer, absorbs light in a predetermined wavelength region to photoelectrically convert it, and transmits light in wavelength regions other than the predetermined wavelength region. The microlens are provided at positions respectively facing light-receiving surfaces of the plurality of photoelectric conversion elements via the organic photoelectric conversion layer and collect incident light on the photoelectric conversion elements. |
