| 摘要 |
PROBLEM TO BE SOLVED: To provide a bonding material, a bonding method and a manufacturing method of a semiconductor device capable of preventing positional deviation from a supply position when a specified bonding material is used.SOLUTION: In a bonding method, such a bonding material 10, in which first and second X type metal material (Cu layer 3A, 3B) which primarily contain Cu, Au, Ag or Sn as the outermost layer and [Zn layer 1/Al layer 2] disposed between the first and second X type metal material are laminated, and the first X type metal material (Cu layer 3A) is thicker than the second X type metal material (Cu layer 3B) and has a thickness of 3% or more of the total thickness of the bonding material, is bonded onto material to be bonded (heat block 100) which is located on the lower side while turning the first X type metal material (Cu layer 3A) to the upper side. |
