METHOD FOR FABRICATING SEMICONDUCTOR APPARATUS

摘要

According to the present invention, the method for fabricating a semiconductor apparatus can comprise the steps of: placing a semiconductor substrate in a process chamber; making the inside of the process chamber into an environment with a high temperature; supplying source gas into the process chamber; performing a pyrolysis of the source gas; depositing metal ions of the source gas on the semiconductor substrate; making the inside of the process chamber into a plasma environment; supplying reaction gas into the process chamber; making the reaction gas react with a part of the metal ions deposited on the semiconductor substrate; and removing the reacted metal ions from the semiconductor substrate.