| 摘要 |
The present invention relates to a p-type amorphous oxide semiconductor including gallium and a manufacturing method thereof, capable of simply manufacturing the p-type amorphous oxide semiconductor including gallium by a solution process by a gallium concentration ratio. More particularly, the present invention relates to the p-type oxide semiconductor additionally combining Ga with a bond of one or more selected among Cus, SnO, ITO, IZTO, and IZO, and the manufacturing method thereof. The p-type oxide semiconductor according to the present invention implements a manufacturing process with low temperatures and low costs through easily manufacturing the p-type oxide semiconductor by the solution process, obtains a crystalline or amorphous thin film by the gallium concentration ratio, and implements a thin film transistor with high performance and high mobility. |
