发明名称 ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 According to one embodiment, there is provided a manufacturing method of an electronic device including a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, an organic semiconductor layer between the source and drain electrodes, and a gate electrode on the organic semiconductor layer via a gate insulating layer. The manufacturing method includes forming a nonphotosensitive resin layer as the gate insulating layer on the organic semiconductor layer and on the lower electrode, forming a photosensitive resin layer as the gate insulating layer on the nonphotosensitive resin layer, and forming a through hole in the photosensitive resin layer on the lower electrode.
申请公布号 US2015270488(A1) 申请公布日期 2015.09.24
申请号 US201514658563 申请日期 2015.03.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 AKIYAMA Masahiko
分类号 H01L51/00;H01L51/05 主分类号 H01L51/00
代理机构 代理人
主权项 1. A manufacturing method of an electronic device comprising a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, comprising an organic semiconductor layer between the source electrode and the drain electrode, and comprising a gate electrode on the organic semiconductor layer via a gate insulating layer, the method comprising: forming a non-photosensitive resin layer as the gate insulating layer on the organic semiconductor layer and the lower electrode; forming a photosensitive resin layer as the gate insulating layer on the non-photosensitive resin layer; and forming a through hole in the photosensitive resin layer on the lower electrode.
地址 Tokyo JP