发明名称 |
ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
According to one embodiment, there is provided a manufacturing method of an electronic device including a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, an organic semiconductor layer between the source and drain electrodes, and a gate electrode on the organic semiconductor layer via a gate insulating layer. The manufacturing method includes forming a nonphotosensitive resin layer as the gate insulating layer on the organic semiconductor layer and on the lower electrode, forming a photosensitive resin layer as the gate insulating layer on the nonphotosensitive resin layer, and forming a through hole in the photosensitive resin layer on the lower electrode. |
申请公布号 |
US2015270488(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201514658563 |
申请日期 |
2015.03.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
AKIYAMA Masahiko |
分类号 |
H01L51/00;H01L51/05 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of an electronic device comprising a lower electrode, a source electrode and a drain electrode made of a nanoparticulate conductive material on a substrate, comprising an organic semiconductor layer between the source electrode and the drain electrode, and comprising a gate electrode on the organic semiconductor layer via a gate insulating layer, the method comprising:
forming a non-photosensitive resin layer as the gate insulating layer on the organic semiconductor layer and the lower electrode; forming a photosensitive resin layer as the gate insulating layer on the non-photosensitive resin layer; and forming a through hole in the photosensitive resin layer on the lower electrode. |
地址 |
Tokyo JP |