| 摘要 |
Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, a storage material formed between the self-aligning polarizer and the pinned polarizer, a first oxide material formed between the pinned polarizer and the storage material, and a second oxide material formed between the storage material and the self-aligning polarizer. |
