| 摘要 |
Provided are: a photoelectric conversion element which has improved characteristics and reliability in comparison to conventional photoelectric conversion elements; and a method for producing a photoelectric conversion element. This photoelectric conversion element is provided with: a first recessed and projected pattern (8) and a second recessed and projected pattern (9), which are provided in one surface of a semiconductor substrate (1); a first i-type semiconductor film (2) and a first conductivity type semiconductor film (3), which are provided on the first recessed and projected pattern (8); a second i-type semiconductor film (4) and a second conductivity type semiconductor film (5), which are provided on the second recessed and projected pattern (9); an electrode layer (11) for the first conductivity type, which is provided on the first conductivity type semiconductor film (3); and an electrode layer (12) for the second conductivity type, which is provided on the second conductivity type semiconductor film (5). The first recessed and projected pattern (8) and the second recessed and projected pattern (9) have different shapes. |
