| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a purge method for a vapor phase epitaxy apparatus in which a GaN thin film is vapor-grown by using a SiC heater as a resistance heating heater, and which does not cause nitriding of the SiC heater; and provide the vapor phase epitaxy apparatus to which the purge method is applied. <P>SOLUTION: A purge method according to an embodiment for a resistance heating heater in a vapor phase epitaxy apparatus 1 is a purge method of a SiC heater 11 in the vapor phase epitaxy apparatus that forms a nitride-based compound semiconductor film on a substrate 25 by using the SiC heater 11 as heating means of the substrate 25 to heat the substrate 25 to a temperature of 1000°C and over by the SiC heater 11, the method using any of argon, xenon and a mixed gas of argon and xenon as a purge gas for purging the SiC heater 11. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
