发明名称 |
OVERLAY MEASUREMENT OF PITCH WALK IN MULTIPLY PATTERNED TARGETS |
摘要 |
Multiply patterned metrology targets and target design methods are provided to enable pitch walk measurements using overlay measurements. Multiply patterned structures having single features or spacers produced simultaneously and sharing a common pitch with the paired features or spacers are used to express pitch walk as a measurable overlay between the structures. For example, targets are provided which comprise a first multiply patterned structure having a single left-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers, and a second multiply patterned structure having a single right-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers. |
申请公布号 |
US2015268164(A1) |
申请公布日期 |
2015.09.24 |
申请号 |
US201514734687 |
申请日期 |
2015.06.09 |
申请人 |
KLA-TENCOR CORPORATION |
发明人 |
AMIR Nuriel |
分类号 |
G01N21/47;G01N21/01;B05D1/32 |
主分类号 |
G01N21/47 |
代理机构 |
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代理人 |
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主权项 |
1. A multiply patterned metrology target, comprising:
at least two multiply patterned structures defined by respective pairs of features or pairs of spacers, which multiply patterned structures further comprise:
a first multiply patterned structure having a single left-hand feature or a single left-hand spacer produced simultaneously and sharing a first common pitch with the respective pairs of features or pairs of spacers; and,a second multiply patterned structure having a single right-hand feature or a single right-hand spacer produced simultaneously and sharing the first common pitch with the respective pairs of features or pairs of spacers. |
地址 |
Milpitas CA US |