COMPOSITION FOR FILM FORMATION, RESIST UNDERLAYER FILM, AND FORMING METHOD OF RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD

摘要

A composition for film formation includes a compound represented by formula (1), and a solvent. R1 represents a monovalent group including an aromatic ring. n is an integer of 3 to 6. At least one monovalent group represented by R1 further includes a group including an ethylenic double bond. a plurality of R1s are identical or different. A part or all of hydrogen atoms on the benzene ring in the formula (1) and on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms.;

主权项

1. A composition for film formation comprising: a compound represented by formula (1); and a solvent,wherein in the formula (1), R1 represents a monovalent group comprising an aromatic ring; n is an integer of 3 to 6; at least one monovalent group represented by R1 further comprises a group comprising an ethylenic double bond; a plurality of R1s are identical or different; and a part or all of hydrogen atoms on the benzene ring in the formula (1) and on the aromatic ring are unsubstituted or substituted with a halogen atom or an alkyl group having 1 to 10 carbon atoms.