| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element having high reliability in which light absorption of an electrode is suppressed.SOLUTION: A semiconductor laser element has a semiconductor layer laminated on a substrate, a stripe-like ridge formed on the surface of the semiconductor layer, and an electrode formed on the ridge. The electrode covers the upper surface of the ridge, and has a flat portion and slope portions disposed at both the sides of the flat portion with respect to the upper surface of the ridge. An area from the side surface of the ridge to the slope portions of the electrode is covered by a protection film. The protection film is formed at a higher position than the upper surface of the electrode, and covers a part of the flat portion. |
