| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate SUB in which an ntype semiconductor region SR for a source and an ntype semiconductor region DR for a drain are formed in a surface layer at a distance from each other; a gate electrode GE formed on a principal surface of the semiconductor substrate SUB between the ntype semiconductor region SR and the ntype semiconductor region DR via an insulation film GI for a gate insulation film; and a LOCOS oxide film 2 and an STI insulation film 3 which are formed on the principal surface of the semiconductor substrate SUB between a channel formation region below the gate electrode GE and the ntype semiconductor region DR for the drain, in which the LOCOS oxide film 2 is located on the channel formation region side and the STI insulation film 3 is located on the ntype semiconductor region DR side. |
