| 摘要 |
<p>Provided is a highly reliable diode device in which it is possible to prevent the electrolysis of water in the vicinity of an edge of a pn junction interface of a thin-film diode when the device is used in a high-humidity environment. With an insulating layer (5) which is a moisture-resistant protective film, it is possible to prevent the infiltration of moisture in the vicinity of an edge of a pn junction interface (S). Thus, it is possible to provide a highly reliable diode device (100), because it is possible to prevent the production of hydrogen caused by the electrolysis of water in the vicinity of the edge of the pn junction interface (S) by an electric field created when a voltage is applied to the diode device (100), and thereby prevent degradation in characteristics of the thin-film diode caused by the reduction of oxide semiconductor materials and/or oxynitride semiconductor materials which form a first semiconductor layer (3) and a second semiconductor layer (4), and prevent the thin-film diode from malfunctioning.</p> |
