发明名称 POWER AMPLIFICATION MODULE
摘要 A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.
申请公布号 US2015270809(A1) 申请公布日期 2015.09.24
申请号 US201514640341 申请日期 2015.03.06
申请人 Murata Manufacturing Co., Ltd. 发明人 Shimamoto Kenichi;Tanaka Satoshi;Matsuoka Tadashi
分类号 H03F1/02;H03F3/21;H03F1/30;H03F3/193 主分类号 H03F1/02
代理机构 代理人
主权项 1. A power amplification module comprising: a first bipolar transistor which amplifies and outputs a radio frequency signal input to the base of the first bipolar transistor; a current source which outputs a control current; a second bipolar transistor which is connected to an output terminal of the current source, a first current out of the control current being input to the collector of the second bipolar transistor; a control voltage generation circuit which is connected to the output terminal of the current source and generates a control voltage according to a second current out of the control current; a first FET, the drain of the first FET being supplied with a power supply voltage, the source of the first FET being connected to the base of the first bipolar transistor, and the gate of the first FET being supplied with the control voltage; and a second FET, the drain of the second FET being supplied with the power supply voltage, the source of the second FET being connected to the base of the second bipolar transistor, and the gate of the second FET being supplied with the control voltage.
地址 Kyoto JP