发明名称 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 An OLED device is disclosed. The OLED device includes: a substrate defined into an active area in which a plurality of pixels are formed in a matrix shape, a GIP (gate-in-panel) area in which drive elements are formed, a ground contact area, and a seal line area; a thin film transistor formed in each pixel region within the active area; an organic light emission diode formed on a protective film and configured to include a first electrode, an organic light emission layer and a second electrode; a bank layer formed to divide the organic light emission diode into pixel units; a signal wiring formed in the ground contact area and the seal line area; and an extended portion formed from the same material as the first electrode of the organic light emission diode and configured to cover the signal wiring, wherein a seal line within in the seal line area is formed on an edge of the signal wiring, which is covered with the extended portion, and an interlayer insulation film adjacent to the edge of the signal wiring. Such an OLED device can prevent a stained fault generation in the seal line region by largely forming a connection electrode, which makes contact with signal wirings formed along edges of an active area, and covering the signal wirings with a metal pattern.
申请公布号 US2015270513(A1) 申请公布日期 2015.09.24
申请号 US201514732264 申请日期 2015.06.05
申请人 LG DISPLAY CO., LTD. 发明人 Choi Hee Dong;Jeon Seung Joon
分类号 H01L51/56;H01L27/32;H01L51/52 主分类号 H01L51/56
代理机构 代理人
主权项 1. A method of manufacturing an organic light emitting display device, the method comprising: preparing a substrate defined into an active area in which a plurality of pixels will be formed in a matrix shape, a GIP (gate-in-panel) area in which drive elements will be formed, a ground contact area, and a seal line area; forming a thin film transistor, which is configured with a channel layer, a gate insulation film, a gate electrode, and source and drain electrodes, in each pixel region within the active area as well as a signal wiring on an interlayer insulation film corresponding to the seal line area and the ground contact area; forming a protective film on the substrate provided with the thin film transistor, and exposing a part of the drain electrode of the thin film transistor and the signal wiring through a contact hole formation process; and forming an organic light emission diode, which is configured with a first electrode, an organic light emission layer and a second electrode, on the substrate provided with the protective film, wherein an extended portion is formed to cover the signal wiring at the formation of the first electrode.
地址 Seoul KR